Abstract
Because the gate height is critical to transistor performance, controlling gate height precisely and uniformly is the primary challenge for the replacement metal gate aluminum CMP process. A real-time profile control (RTPC) method was combined with a laser-based endpoint system to achieve within-wafer and wafer-to-wafer gate height uniformity requirements. To meet another challenge in Al CMP, defect performance was improved by 20X via consumables selection and process optimization.
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