Abstract
We have demonstrated the operation of high on-off current ratio (Ion/Ioff) and low subthreshold slope planar-type InGaAs tunnel field effect transistors (TFETs) with Zn-diffused source junctions. The solid-phase Zn diffusion process has been shown to form defect-less p+/n source junctions with steep profiles because of the inherent nature of Zn diffusion into InGaAs, which has significantly improved the TFET performance. The devices presented in this paper have exhibited a record low subthreshold slope of 64 mV/dec for planar-type III-V TFETs and a large Ion/Ioff ratio of more than 106 at the same time.
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