Abstract
The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the Ion/Ioff ratio in graphene transistors with ELDs enhances their applicability in digital devices.
Highlights
Graphene, a two-dimensional allotrope of carbon with the thickness of one atom, has attracted the attention of researchers because of its unique electronic transport properties
The armchair nanoribbon channel used with the extended line defect was placed in the center
In this study a comprehensive numerical analysis was conducted about graphene nanoribbon field effect transistors with extended line defects (ELD-GNRFET) based on the non-equilibrium Green's function (NEGF) formalism
Summary
A two-dimensional allotrope of carbon with the thickness of one atom, has attracted the attention of researchers because of its unique electronic transport properties. The research into divacancies and ELD in armchair nanoribbons shows that the presence of divacancy defects has significant impacts on the band structure and electronic transport properties of AGNR. First, the device performance of an AGNR field effect transistor with ELD was investigated by employing self-consistent NEGF formalism and tight-binding Hamiltonian calculation.
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