Abstract
The authors demonstrate and compare the experimental results of the high-performance InGaP /InGaAs camel-gate n-channel and p-channel /spl delta/-doped pseudomorphic modulation-doped field effect transistors (pMODFETs). For the n-channel device, because of the p-n depletion in the camel-like gate region and the presence of large conduction band discontinuity at InGaP/InGaAs heterostructure, an extremely large gate turn-on voltage than 1.7 V is measured. However, the p-channel device exhibits a larger turn-on voltage than 2 V due to the relatively large valence band discontinuity at InGaP/InGaAs heterostructure.
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