Abstract
In this paper, we present high-frequency characteristics of transistors and inductors in low-temperature polycrystalline-silicon thin-film transistor (LTPS TFT) technology for low-cost radio frequency applications. From 2-D device simulations, we show that the linearity of LTPS TFTs is independent of the channel length due to the presence of grain boundaries. Furthermore, since LTPS TFTs can be fabricated on insulating substrates, on-chip spiral inductors on such substrates have negligible substrate loss, leading to high quality ( <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$Q$</tex></formula> ) factor. From electromagnetic simulations, we observe that spiral inductors in LTPS TFT technology show lower parasitics, higher <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$Q$</tex> </formula> factor, and higher self-resonance frequency <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(f_{\rm RES})$</tex> </formula> compared to typical bulk CMOS inductors having similar inductance. Such high <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$Q$</tex></formula> of inductors allows compensating for low <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$g_{m}$</tex></formula> of LTPS TFTs.
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