Abstract
Graphene material exhibits a number of outstanding electronic and mechanical properties that make it very attractive for micro and nanoelectronic applications. Considering graphene field effect transistors (GFETs), considerable efforts were made during the recent years, and the devices at state of the art show impressive high frequency cut-off frequencies. The interest of GFET is particularly strong for some high frequency (HF) applications such as high linearity mixer in W-band, THz detection, …. In this paper we will give an overview on the GFETs and will present the devices developed in our Lab. Based on high frequency measurements of noise characteristics of our GFETs, we will point out the impact of technological aspects (such as contact resistance, device structure) on the HF noise performances. The implications of our findings for the development of graphene-based circuit such as low noise amplifiers will be also discussed.
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