Abstract
A high-frequency analysis of Cu-carbon nanotube (CNT) composite through-silicon vias (TSVs) is conducted. The electrical modeling of the Cu-CNT composite TSVs is performed, with the effective complex conductivity formulated for accurate characterization of kinetic inductance. It is shown that, after codepositing CNT with Cu, the electrical conductivity of the TSVs can be improved and the influence of kinetic inductance variation can be suppressed in comparison with the CNT TSVs. On the other hand, the Cu-CNT composite TSVs can exhibit little compromise in performance yet much enhanced reliability by comparison to the Cu counterpart. That is, the Cu-CNT composite TSVs can provide a better tradeoff between reliability and performance than the Cu and CNT counterparts.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
