Abstract
We demonstrated high-brightness InGaN/GaN green light emitting diodes (LEDs) with ex-situ sputtered stress-manipulated AlNO buffer on 4-inch patterned sapphire substrates. The lattice constant of the AlNO buffer was adjusted by oxygen flow. As a result, the dislocation density and the in-plane compressive stress caused by lattice mismatch were greatly reduced, while the interface quality of the InGaN/GaN multiple quantum wells and the uniformity of the indium composition were greatly improved. At 20A/cm<sup>2</sup>, the external quantum efficiency and wall plug efficiency of the 526.4-nm-green LEDs grown on the sputtered AlNO buffer reached 46.1% and 41.9%, which were both higher than reported values.
Highlights
Light emitting diodes (LEDs) have been widely used in reach 40%
The quality of the AlNO buffer layers was analyzed by using X-ray diffraction (XRD)
The reciprocal space mappings (RSM) of light emitting diodes (LEDs) A and LED D on the (10-15) plane were shown in Fig. 4(a) and 4(b)
Summary
Abstract—We demonstrated high-brightness InGaN/GaN green light emitting diodes (LEDs) with ex-situ sputtered stressmanipulated AlNO buffer on 4-inch patterned sapphire substrates. The lattice constants of the AlNO buffer efficiencies with different colors are unbalanced: the efficiency layers and the dislocation densities of full LED structures were of the LEDs in the green wavelength region is much lower than investigated by X-ray diffraction and rocking curve analysis. For the LEDs made from (AlxGa1-x)0.5In0.5P, was examined by analyzing the reciprocal space mappings of their external quantum efficiency (EQE) is very high in the red epi-layers.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
