Abstract
Magnetron enhanced reactive ion etching (RIE) of poly-crystalline 3C-SiC thin films grown on thermally oxidised Si substrates has been investigated in CHF 3 plasmas. The magnetron enhanced RIE can stably etch the poly-crystalline 3C-SiC thin film at a lower ion energy (70 W) without any damage than can the commercial RIE system. The best vertical structure was improved by the addition of 40% O 2 and 16% Ar with the CHF 3 reactive gas.
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