Abstract
Bulk amorphous chalcogenide semiconductor, As2Se3, has been irradiated at room temperature with 75 MeV energy Ni, Ge and Ag ions at fluences in the range 1×1013–1×1014ions/cm2. The ion-induced effects on the electronic properties have been monitored by measuring the dc conductivity and frequency dependent ac conductivity (500 Hz – 10 kHz) as a function of temperature (180–450 K). It is found that the electrical effects in the samples bombarded with Ni ions are quite different from the ones bombarded with Ge/Ag ions. Ion-irradiation induced defect states near the Fermi level play a dominant role in the variable range hopping conduction. Bipolaron hopping conduction appears to be affected less by ion-irradiation. It is interesting to see that as small an ion-dose as 5×1013ions/cm2 is quite effective to modify the electrical transport behaviour of the glass.
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