High Electron Mobility Silicon Films Grown on Sapphire at High Growth Rate

Abstract

Electron mobility of N-type (100) plane silicon films 1 µm thick on (11̄02) sapphire substrate has been investigated associating with the growth rate. High electron mobility, near 600 cm2V-1s-1, has been achieved at 10∼20 µ/min high growth rate. Dislocation etch pits and stacking fault patterns have been revealed by the newly developed chemical etching. The dislocation density decreases at low growth rate region (<2 µ/min) with increasing growth rate. At high growth rate, more than 10 µ/min, stacking fault density decreases. The in-depth profiles of auto-doped aluminum have been obtained by the ion mass spectrometry. As a result, mobility enhancement at the high growth rate is assigned to stacking fault decrements in the films.