Abstract
We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique breakdown field close to 100 V/µm while offering high frequency performance. The low leakage current well below 1 µA/mm is achieved without using any gate dielectrics which typically degrade both the frequency performance and the device reliability. This achievement is mainly attributed to the optimization of material design and processing quality and paves the way for millimeter-wave devices operating at drain biases above 40 V, which would be only limited by the thermal dissipation.
Highlights
As a consequence to the rapid development of Radio Frequency (RF) power electronics, wide bandgap materials have been introduced due to their potential in high output power density, high operation voltage and high input impedance
Gallium Nitride (GaN) device downscaling is usually achieved at the expense of a much lower breakdown voltage as compared to devices with larger dimensions [1,2,3,4]
[9,10,11], namely by on a silicon substrate, showing that all the above-mentioned issues can be overcome in these emerging preventing the strain relaxation of the barrier layer
Summary
As a consequence to the rapid development of Radio Frequency (RF) power electronics, wide bandgap materials have been introduced due to their potential in high output power density, high operation voltage and high input impedance. Sub-10-nm ultrathin barrier GaN transistors have been proposed [5] in order to avoid gate recessing which is commonly used to reduce the gate-to-channel distance while shrinking the gate length but generally causes reliability issues due to plasma damage under the gate [6] In this frame, we have demonstrated the possibility of preventing gate tunneling through highly scaled Aluminum. Report on theleakage high breakdown highly scaled GaN transistors grown controlling the we surface parasitic current and voltage achievinginhigh performance [9,10,11], namely by on a silicon substrate, showing that all the above-mentioned issues can be overcome in these emerging preventing the strain relaxation of the barrier layer. We report on the high breakdown voltage in highly scaled GaN transistors grown on a silicon substrate, showing that all the above-mentioned issues can be overcome in these
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