Abstract
SiC–BN composites with a BN content of 6 wt.% were pressureless sintered to ∼99.4% theoretical density at 2200 °C for 1 h and found to have a high electrical resistivity of 1.24 × 10 10 Ω cm. Starting B 4 C and C were added to react partially with Si 3 N 4 for in situ synthesis of BN and also to serve as sintering aids. Interface diffusion of B and N from BN into SiC was crucial to improving the insulating and dielectric properties through carrier compensation without causing any obvious decrease in the thermal conductivity .
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