Abstract
High efficiency 980 nm longitudinal photonic band crystal (PBC) edge emitting laser diodes are designed and fabricated. The calculated results show that eight periods of Al 0.1 Ga 0.9 As and Al 0.25 Ga 0.75 As layer pairs can reduce the vertical far field divergence to 10.6° full width at half maximum (FWHM). The broad area (BA) lasers show a very high internal quantum efficiency ηi of 98% and low internal loss αi of 1.92 cm-1. Ridge waveguide (RW) lasers with 3 mm cavity length and 5um strip width provide 430 mW stable single transverse mode output at 500 mA injection current with power conversion efficiency (PCE) of 47% under continuous wave (CW) mode. A maximum PCE of 50% is obtained at the 300 mA injection current. A very low vertical far field divergence of 9.4° is obtained at 100 mA injection. At 500 mA injection, the vertical far field divergence increases to 11°, the beam quality factors M 2 values are 1.707 in vertical direction and 1.769 in lateral direction.
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