Abstract
Carbon nanotube field effect transistor (CNTFET) based full wave rectifier given in the paper, works efficiently in the range of radio frequency. The CNTFET offers extremely less power loss and high through-put because of its high conducting properties. The Complementary Metal Oxide Semiconductor (CMOS) based studies are available but CNTFET based studies are rarely available. Therefore, CNTFET based rectifier has been used for the replacement of CMOS based rectifier architecture. The full wave rectifier circuit was analyzed using 32nm CNTFET Stanford model. An additional circuit of clampers is also used for introducing a negative DC level. Introduced negative DC signal further negated RF input signal and combined signal used for biasing the p type device during its conduction cycle. The CNTFET based rectifier with clamper circuit decreases the effective threshold voltage of switching p CNTFETs. The circuit resulted better RF input sensitivity of the transistor. Results show that 77.7% power conversion efficiency is suitable for powering up the bio-implantable devices.
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