Abstract
The authors develop a hydrogenated protocrystalline silicon (pc-Si:H)/hydrogenated microcrystalline silicon (μc-Si:H) double-junction solar cell structure employing a boron-doped zinc oxide (ZnO:B) intermediate layer. Highly stable intrinsic pc-Si:H and μc-Si:H absorbers are prepared by a 60MHz very-high-frequency plasma-enhanced chemical vapor deposition technique. Degenerate ZnO:B intermediate and back reflectors are deposited via a metal organic chemical vapor deposition technique. Because the ZnO:B intermediate layer reduces the potential thickness for the pc-Si:H absorber in the top cell, this double-juncion structure is a promising candidate to fabricate highly stable Si-based thin-film solar cells. Consequently, the high conversion efficiency of 12.0% is achieved.
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