Abstract
A high-efficiency uni-travelling carrier (UTC) photodiode has been developed which employs an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD shows a maximum responsivity of 0.48 A/W even with an absorption layer as thin as 280 nm, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.
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