Abstract
High-crystalline-quality CdS thin films with a mono-grained layer of submicron grain size were successfully fabricated. CdS thin films prepared by chemical bath deposition were re-crystallized under different chemical atmospheres. The microstructure of the CdS films, the hetero-junction interface CdS/CdTe, and therefore the solar cell performance were critically dependent on the film process history of the window CdS layers. Heat treatment of a CdS precursor film coated with a CdCl2 layer and under a high CdCl2 vapor pressure reduced over-oxidation at the grain surface and promoted in-plane grain coalescence along the CdS/FTO (F-doped SnO2) interface. A high-crystalline-quality, mono-grain CdS layer ensured homogenous intermixing of CdS and CdTe at the junction interface. A short-circuit current as high as 25.1 mA cm−2 was obtained for a mono-grain-CdS/CdTe solar cell. The corresponding solar cell efficiency is 14.6%.
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