Abstract
We have achieved a total-area initial efficiency of 11.47% (active-area efficiency of 12.33%) on a-Si:H/μc-Si:H double-junction structure, where the intrinsic layer bottom cell was made in 50 minutes. On another device in which the bottom cell was made in 30 min, we achieved initial total-area efficiency of 10.58% (active-efficiency of 11.35%). We have shown that the phenomenon of ambient degradation of both μc-Si:H single-junction and a-Si:H/μc-Si:H double-junction cells can be attributed to impurity diffusion after deposition. Optimization of the plasma parameters led to alleviation of the ambient degradation. Appropriate current matching between the top and bottom component cells has resulted in a stable total-area efficiency of 9.7% (active-area efficiency of 10.42%) on an a-Si:H/μc-Si:H double-junction solar cell in which the deposition time for the μc-Si:H intrinsic layer deposition was of 30 min.
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