Abstract
A high efficiency AlGaAs/Si tandem solar cell has been fabricated by metal-organic chemical vapor deposition (MOCVD). It consists of a Al 0.15Ga 0.85As top cell and a Si bottom cell. The crystalline quality of the Al 0.15Ga 0.85As heteroepitaxial layer grown on Si has been improved using a high temperature growth process (800°C) and thermal cycle annealing (300 ∼ 900°C). The quantum efficiency of the Si bottom cell in the long wavelength region has been improved by back surface field. The conversion efficiencies of the tandem solar cell under AMO and 1 sun measurement conditions with 4-terminal and 2-terminal configuration are 20.0% and 19.0%, respectively. The conversion efficiencies of the tandem solar cell with graded band gap emitter Al x Ga 1− x As layer achieved 20.6% and 19.9% under the same condition with 4-terminal and 2-terminal configuration, respectively.
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