Abstract
AbstractA high efficiency Ka‐band GaN high power amplifier (HPA) utilizing 0.15‐μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented in this letter. The MMIC is designed with load‐pull method, with the final stage matched to compromise between output power and power added efficiency (PAE). An output power of more than 43 dBm and a power added efficiency of more than 30% over the band of 33–37 GHz under a drain voltage of 24 V at 100 μs pulse‐width and 10% duty‐cycle have been achieved. The chip size is 2.8 mm × 3.4 mm (9.52 mm2).
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