Abstract
Composed of a metal oxide (MO x ) material-based emitter layer, p–n heterojunction photodetectors (HPDs) challenge their homojunction counterparts for use in new generation applications requiring high performance. Here, n-type SnO2 thin film is deposited on p-type Si (100) substrate to form a low-cost and high-performance HPD with its decent photo-sensing ability. The device responds to ultraviolet (UV)-B light under reverse bias as short as 40 ms. High detectivity of 1.38 × 1013 Jones, pronounced responsivity of 2.16 A W−1 and large UV/visible rejection ratio of 221 are found for the device. Eventually, these satisfactory figure of merits of the device disclose its superiority for selective-detection of weak optical signals in the UV-B regime of UV radiation spectrum.
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