Abstract
The performance of Pb 0.8Sn 0.2Te photodiodes manufactured by various methods have been reported for the temperature region 60–80 K. In this paper the performance of Pb 0.8Sn 0.2Te photodiodes fabricated by liquid-phase epitaxy (LPE) and by molecular-beam epitaxy (MBE) in the temperature interval 10–80 K are given. At T < 30 K the incremental resistance area ( R 0 A) product was limited by tunnelling through defects in the depletion region and D ∗ λp ~ 10 13 cm H 1 2 2 W −1 has been achieved.
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