Abstract
High detectivity AlInSb mid-infrared photodiode sensor was fabricated on GaAs substrate. By inserting two pairs of 20 nm dislocation filter layers with high Al composition into n-type buffer layer, threading dislocation density was reduced to 1/3 or less. Resulting photodiode sensor showed high resistivity-area product (RA) of $19 \mathrm{M}\Omega\mu \mathrm{m}^{2}$ and high normal-incidence detectivity of $1.7\times 10^{9} \mathrm{cm} \surd \mathrm{Hz}/\mathrm{W}$ at $3.3 \mu \mathrm{m}$ at room temperature. To the best of our knowledge, this photodiode shows the highest performance in highly mismatched alloy system, i.e. AlInSb on GaAs substrate.
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