Abstract
We investigated the effects of a high density O 2 plasma treatment on the structural and electrical properties of sputter-deposited GZO films. The GZO films were deposited on polyimide substrate without substrate heating by RF magnetron sputtering from a ZnO target mixed with 5 wt.% Ga 2O 3. Prior to the GZO film growth, we treated a polyimide substrate with highly dense inductively coupled oxygen plasma. The optical transmittance of the GZO film, about 80%, was maintained regardless of the plasma pre-treatment. However, the resistivity of the film was strongly influenced by the plasma pre-treatment. The resistivity of the GZO film decreased from 1.02 × 10 − 2 Ω cm without an O 2 plasma pre-treatment to 1.89 × 10 − 3 Ω cm with an O 2 plasma pre-treatment.
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