Abstract
High-density plasma etching of amorphous CoFeSiB magnetic films was carried out in a Cl 2/Ar and Cl 2/O 2/Ar gas mixes. In a Cl 2/Ar gas, as the Cl 2 concentration increased, the etch rate of CoFeSiB films decreased, and etch residues decreased but the etch slope was slanted. However, in Cl 2/O 2/Ar gas mix, the etch characteristics of CoFeSiB films with TiN hard mask was enhanced. The etch rate and selectivity of CoFeSiB films were investigated as a function of O 2 concentration. The use of TiN hard mask gave rise to high etch selectivity of CoFeSiB to TiN mask due to large decrease in etch rate of TiN in Cl 2/O 2/Ar chemistry. The addition of O 2 into the gas mix led to the anisotropic etching of CoFeSiB films without the etch residues.
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