Abstract
This paper presents the design and characterization of high conversion-gain pixels in a 180-nm CMOS image sensor process. By reducing overlapping capacitance between a floating diffusion and transfer gate, output-referred pixel conversion gain as high as 118uV/e- and read noise as low as 1.8e- rms are experimentally achieved without significant lag. A dark current of 38 pA/cm2 is measured at 60 °C. Comparison between the proposed devices and a baseline pixel regarding device structure and characterization results is also presented.
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