Abstract
Very narrow SiO2 line patterns with extremely high aspect ratio are fabricated on a silicon wafer by new edge lithography process. The simple process without chemical vapor deposition process is developed. The Si step etching is carried out by F radical dominant etching by reducing the loading effect. The straight line of 25nm width and 700nm height is fabricated. The circular line with 40nm width and 400nm height is also fabricated. The aspect ratios for the straight and circular lines are 28 and 10, respectively. In order to the fabricate imprint mold, the fabricated narrow lines are replicated to a nickel by the electro forming. The nickel replica with 40nm cavity width is successfully fabricated.
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