Abstract
We show experimental evidence of surface phonon scattering in the high-/spl kappa/ dielectric being the primary cause of channel electron mobility degradation. Next, we show that midgap TiN metal-gate electrode is effective in screening phonon scattering in the high-/spl kappa/ dielectric from coupling to the channel under inversion conditions, resulting in improved channel electron mobility. We then show that other metal-gate electrodes, such as the ones with n+ and p+ work functions, are also effective in improving channel mobilities to close to those of the conventional SiO/sub 2//poly-Si stack. Finally, we demonstrate this mobility degradation recovery translates directly into high drive performance on high-/spl kappa//metal-gate CMOS transistors with desirable threshold voltages.
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