Abstract
Photoluminescence (PL) of self-organized quantum dots (QDs) in bilayer InAs/GaAs structures is studied with a fixed seed layer and spacer, but variable second-layer coverage. Careful line shape analysis reveals modulation in the high-energy tail of the seed-layer PL spectrum. The oscillation-like behavior is reproducible with variations in both the temperature and optical excitation energy. These oscillations are attributed to carrier relaxation through inelastic phonon scattering from the wetting layer to the QD excited states.
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