Abstract
In this work, the first demonstration of the bipolar resistive switching memory using HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film with a TiN/Al-Cu bi-layer electrode is reported. All of the elements in this device are compatible with the advanced CMOS manufacture. A robust endurance (> 105 cycles) and data retention (>10 years at 85 degC) of this memory device was achieved. The memory also shows the potential of fast operation speed (< 50 ns), low operation power and capability of multi-level operation. The fabrication process flow of the TiN/AlCu/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN memory device is also reported.
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