Abstract
Results are presented on the performance of a heterojunction interfacial workfunction internal photoemission (HEIWIP) wavelength-tailorable detector. The detection mechanism is based on free-carrier absorption in the heavily doped emitter regions and internal emission across a workfunction barrier caused by the band gap offset at the heterojunction. The HEIWIP detectors have the high responsivity of free-carrier absorption detectors and the low dark current of quantum well infrared photodector type detectors. For a 70±2 cutoff wavelength detector, a responsivity of 11 A/W and a D*=1×1013 cmHz/W with a photocurrent efficiency of 24% was observed at 20 μm. From the 300 K background photocurrent, the background limited performance (BLIP) temperature for this HEIWIP detector was estimated to be 15 K. This HEIWIP detector provides an exciting approach to far-infrared detection.
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