Abstract
β-(AlxGa1–x)2O3 films were deposited on c-plane sapphire substrates by metal–organic chemical vapor deposition. Triethylgallium (TEGa), trimethylaluminum (TMAl), and O2 were used as Ga, Al, and O sources, respectively. (−201), (−402), and (−603) diffraction peaks of β-(AlxGa1–x)2O3 films were observed. The X-ray diffraction peaks shifted to larger diffraction angles and were broadened with the increasing TMAl flow rate or the TMAl/(TMAl + TEGa) flow rate ratio, and the optical band gap was effectively improved. The β-(AlxGa1–x)2O3 films deposited under different temperatures were further investigated. At 600 °C, Al atoms were more easily incorporated into the crystal lattice, and the optical band gap was improved to 5.73 eV. At 800 and 900 °C, the β-(AlxGa1–x)2O3 films existed as polycrystalline materials.
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