Abstract
We have demonstrated the first heterogeneous integration of InGaAs/InAlAs single-photon avalanche diodes with Si photonics through a low-temperature die-to-die bonding technique. A triple-mesa structure has been adopted in InGaAs/InAlAs SPADs. The triple-mesa structure avoids surface exposure to the high electric field to suppress the surface effect induced by the surface defects. This structure can also alleviate the electric field crowding at the mesa edges to eliminate the premature breakdown. The bonding process is done using SU-8 as the adhesion layer which has high transmission efficiency at the SWIR regime and a low-curing temperature. Our integrated SPADs exhibit high single-photon detection efficiency of ~22% and a relatively low dark count rate of 8.6 ×10^5 Hz, which are among the best performance reported for InGaAs/InAlAs SPADs, and are approaching that of InGaAs/InP SPADs. High device yield and performance uniformity are also maintained after the bonding process.
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