Abstract
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recently, Fabry-Pérot Quantum Cascade Lasers integrated on silicon provided a 4800 nm light source for mid-infrared (MIR) silicon photonic applications. Distributed feedback (DFB) lasers are appealing for many high-sensitivity chemical spectroscopic sensing applications that require a single frequency, narrow-linewidth MIR source. While heterogeneously integrated 1550 nm DFB lasers have been demonstrated by introducing a shallow surface grating on a silicon waveguide within the active region, no mid-infrared DFB laser on silicon has been reported to date. Here we demonstrate quantum cascade DFB lasers heterogeneously integrated with silicon-on-nitride-on-insulator (SONOI) waveguides. These lasers emit over 200 mW of pulsed power at room temperature and operate up to 100 °C. Although the output is not single mode, the DFB grating nonetheless imposes wavelength selectivity with 22 nm of thermal tuning.
Highlights
IntroductionThermo-optic phase shifters for the 5 μm range [9], heterogeneously integrated InP-based type-II photodiodes for wavelengths up to 2.4 μm [10], demultiplexers for the 2 μm range utilizing an array of similar photodiodes [11], a fully integrated spectrometer utilizing an array of InAs0.91 Sb0.09 -based photodiodes for 3–4 μm [12], and multiple-quantum-well InGaAs lasers which emit 2.01 μm light in continuous wave (CW) mode at room temperature [13] have been reported
Mid-infrared (MIR) silicon photonic integration offers the opportunity to build inexpensive, compact devices or systems that address a variety of sensing and detection applications on silicon chips
Thermo-optic phase shifters for the 5 μm range [9], heterogeneously integrated InP-based type-II photodiodes for wavelengths up to 2.4 μm [10], demultiplexers for the 2 μm range utilizing an array of similar photodiodes [11], a fully integrated spectrometer utilizing an array of InAs0.91 Sb0.09 -based photodiodes for 3–4 μm [12], and multiple-quantum-well InGaAs lasers which emit 2.01 μm light in continuous wave (CW) mode at room temperature [13] have been reported
Summary
Thermo-optic phase shifters for the 5 μm range [9], heterogeneously integrated InP-based type-II photodiodes for wavelengths up to 2.4 μm [10], demultiplexers for the 2 μm range utilizing an array of similar photodiodes [11], a fully integrated spectrometer utilizing an array of InAs0.91 Sb0.09 -based photodiodes for 3–4 μm [12], and multiple-quantum-well InGaAs lasers which emit 2.01 μm light in continuous wave (CW) mode at room temperature [13] have been reported. InAs0.91Sb0.09-based photodiodes for 3–4 μ m [12], and multiple-quantum-well InGaAs lasers which emit 2.01 μ m light in continuous wave (CW) mode at room temperature [13] have been reported.
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