Abstract

Epitaxial Nb-doped SrTiO3 films grown on Si substrates for nonvolatile resistance memory applications were investigated. With a TiN buffer layer, a high-quality epitaxial Nb-doped SrTiO3 film was grown on the Si substrate, which was confirmed through x-ray diffraction and transmission electron microscopy. Compared with a control sample grown on a silicon substrate without a TiN buffer layer, the epitaxial Nb-doped SrTiO3 samples with the TiN buffer layer show the good resistance memory characteristics of a high resistance ratio, good retention characteristics, and uniformity. In terms of process compatibility with the standard silicon process, epitaxial Nb-doped SrTiO3 samples with a TiN buffer layer have the potential for use in future nonvolatile resistance memory applications.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.