Abstract
Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition is reported. Trimethylindium-trimethylphosphine adduct was used as the indium source and PH3 as the phosphorus source. From x-ray and scanning electron microscopy examination, excellent crystallinity InP epilayers with specular surface morphology can be grown on (100) GaAs substrates. The composition of this heterostructure was identified by the Auger depth profiles. The electron mobility of the undoped InP epilayer can reach 4700 cm2/V s at room temperature. An evident effect of growth temperature on electron mobility is also demonstrated. Carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The efficient photoluminescence compared with that of InP homoepitaxy shows that high-quality InP/GaAs heteroepitaxial layers can be obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
