Abstract
Abstract Heteroepitaxial growth of Al 2 O 3 film on Si substrate was carried out by gas-source metalorganic molecular-beam epitaxy using dimethylethylamine-alane (DMEAA) as an aluminum source and O 2 as an oxygen source. The epitaxial temperature decreased from 800 to 700°C compared with that using trimethylaluminum (TMA) as an aluminum source. It was confirmed that the carbon contamination in the Al 2 O 3 film grown with DMEAA was lower than that of TMA at a relatively low temperature of 650°C, although the film crystallinity degraded and the carbon contamination increased with decreasing of growth temperature.
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