Abstract

We carried out the de Haas–van Alphen (dHvA) experiment under pressure to clarify the nature of f-electron compounds of CeRh 2Si 2, UGe 2 and CeCoIn 5. With increasing pressure, the Néel temperature T N =36 K in CeRh 2Si 2 and the Curie temperature T C =52 K in UGe 2 decrease, and a quantum critical point corresponding to the extrapolation T N or T C→0 is reached at the critical pressure p c≃1.06 and 1.52 GPa, respectively. Experimental results indicate a discontinuous change of the Fermi surface in CeRh 2Si 2 and UGe 2 when the pressure crosses p c. A heavy fermion superconductor CeCoIn 5 with a quasi-two dimensional Fermi surface was found to be located in the vicinity of the quantum critical point.

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