Abstract
In order to obtain metalorganic chemical vapor deposition (MOCVD) grown (Al x Ga 1− x ) 0.5In 0.5P ( x=0.4 and 0.7) with as high as possible hole concentrations two different approaches were investigated. First, as a reference, AlGaInP was grown with the traditional precursor combination trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminium (TMAl) and di-ethylzinc (DEZn) as a dopant. This was compared with layers grown with dimethylamine-alane (DMEAAl) as aluminium precursor and tri-ethylgallium (TEGa) instead of TMGa. The electrical activity of zinc in layers grown with DMEAAl and TEGa is found to be much higher than in layers grown with TMAl and TMGa. Oxygen was identified as the main cause of Zn-acceptor compensation. The other dopant, magnesium, was used with the conventional group III precursors (TMGa, TMIn and TMAl). With both dopants, hole concentrations above 10 18 cm −3 for x=0.4 and close to 10 18 cm −3 for x=0.7 were obtained at growth temperatures of 640 and 720°C.
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