Abstract
Deep-level defects in semi-insulating (S.I.) liquid-encapsulated Czochralski (LEC) GaAs substrates were studied using the thermally stimulated current (TSC) technique. From the heat-treatment temperature dependence of the TSC signal intensity and electrical properties, the thermal behavior of the detected defects with respect to the heat treatment and their correlation to the electrical properties of the substrate were clarified for the first time. The change in the resistivity was closely related to the changes in the TSC signal intensity of T3 (trap depth: 0.31 eV), T6 (0.58 eV) and T x (0.29 eV). The net concentration of these defects changed by 4×1014 cm-3 after heat treatment at 800°C, leading to a threefold increase of the resistivity. Precise thermal control of substrates is very important for consistently obtaining high-quality GaAs substrates.
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