Abstract
Self-heating (SH) effects, which were observed during the development of silicon-on-insulator (SOI) technology for high-performance circuits, raise questions concerning the validity of the extrapolation method used for hot carrier injection (HCI). In this paper, we propose a new methodology for lifetime prediction based on DC HCI stress for SOI technology. The SH is quantified using coupled DC HCI stress and gate resistance measurements for different transistor widths. Then, the degradation part due to SH is removed, enabling accurate HCI lifetime prediction when SH effects are present.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Device and Materials Reliability
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
