Abstract
The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (α <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</sub> = 2.1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) is comparable to the values reported for submicrometer MOSFETs with a metal/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate stack.
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