Abstract
In this paper the results of theoretical (on the base of the local-field model of the Gunn effect) and experimental analysis of possibility for optimization of n0 L-parameter of such semiconductor structures with the intervalley electronic transfer on the criterion of maximal power in the modes with the selection of higher harmonics are represented. It is shown, that generated power on the second harmonic by the Gunn GaAs-diodes with the parameter n0 L=(3 4)x1012 cm-2 considerably (approximately 5 times) higher than the power, generated by structures with n0 L=(1-2)x1012 cm-2.
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