Abstract
The current-voltage characteristic of a MOSFET operating in the saturation region and including the effect of surface-channel mobility reduction is modelled by a third-order polynomial expression. Using this expression, a general expression is obtained for the harmonics and intermodulation performance of a MOSFET operating in saturation and excited by a multisinusoidal gate-to-source voltage. Using this expression, the second-harmonic and the thirdharmonic distortion performance of a linear voltage-to-current convertor proposed recently has been calculated. The results obtained are compared with previously published results
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