Abstract
NPN and PNP lateral bipolar transistors having a base length shorter than 0.5 μm have been made in thin (100 nm) silicon-on-insulator films. Current gains of 75 and 40 have been obtained in NPN and PNP devices, respectively. Measurements indicate a base generation lifetime of 1 μs, and leakage currents of a fraction of a picoampere have been measured. The device fabrication is compatible with an SOI CMOS fabrication process.
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