Abstract
Self-assembled GaInNAs quantum dots (QD) with inserted GaAsN strain-reducing layer were grown on GaAs (001) substrate by solid source molecular beam epitaxy. The highest room temperature photoluminescence (PL) intensity at wavelength of ∼1.57μm was obtained from the sample grown at 500°C, which has the most uniform QD size observed from atomic force microscopy measurement. A number of samples with different spacer thickness and stacked QD layers were grown to investigate the effect of growth condition for GaIn0.5N0.01As QDs. Multilayer structures with 5QD stacks and spacer layer thickness of 2nm were found to show the optimum result in terms of PL intensity.
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