Abstract
In this paper, ultrathin oxides of silicon, aregrown by wet oxidation at 900 °C and at very low(0.04 atm) water vapour pressure. These ultrathin oxides are characterized for their electrical properties by fabricatingAl/thin SiO2/n-Si tunnel diodes; their capacitance-voltage (C-V), current-voltage (I-V) and charge trappingcharacteristics have been studied. The oxide thickness isestimated from the measured C-V characteristics. Frequencydependence of accumulation capacitance is observed andanalysed. Positive charge trapping is noticed in the ultrathin oxides during the constant current stress measurement, and it is found to be thickness dependent, thecharge trapping being lower in the case of thinner oxides.
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