Abstract
The growth and structure of tellurium thin films deposited simultaneously onto the (001) surface of air-cleaved NaCl, KBr and KCl at various substrate temperatures were investigated. When the substrate temperature was increased, epitaxial growth with the tellurium c axis parallel to the [110] and [1 1 0] directions of the KBr and KCl substrates was observed, whereas films deposited onto NaCl gave no evidence of epitaxial growth. The temperature for epitaxial growth was found to decrease when vacuum-cleaved KBr was used as a substrate.
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