Abstract
In this paper, the theory analysis and experiments on the semiconductor silicon crystal growth under the equivalent micro-gravity, which induced by a permanent magnetic field, were investigated. The experimental results show that the crystal growth in the equivalent micro-gravity is similar to that in the space. The homogeneity of doping and the oxygen concentration in CZSi by using the permanent magnetic field, can be improved, because of restriction of the convection, compared with the crystal growth in the conventional CZ method. Diffusion kinetics are dominated during movement of mass in melt under the equivalent micro-gravity, different from that in the conventional CZ method.
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